IDC08S60CE edited by infineon technologies, aim imm, edition 1.1, 27.01.2009 2 nd generation thinq! tm sic schottky diode applications: ? smps, pfc, snubber features: ? revolutionary semiconductor material - silicon carbide ? switching behavior benchmark ? no reverse recovery ? no temperature influence on the switching behavior ? no forward recovery ? high surge current capability a c chip type v br i f die size package IDC08S60CE 600v 8a 1.658 x 1.52 mm 2 sawn on foil mechanical parameter raster size 1.658x 1.52 anode pad size 1.421 x 1.283 area total 2.52 mm 2 thickness 355 m wafer size 100 mm max. possible chips per wafer 2682 passivation frontside photoimide anode metal 3200 nm al cathode metal ni ag ?system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 350m reject ink dot size ? 0.3 mm recommended storage environment store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23c
IDC08S60CE edited by infineon technologies, aim imm, edition 1.1, 27.01.2009 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm t vj = 25 c 600 dc blocking voltage v dc 600 v continuous forward current limited by t vjmax i f t vj < 150c 8 surge non repetitive forward current sine halfwave i f,sm t c = 25 c , t p = 10 ms 59 repetitive peak forward current limited by t vjmax i f,rm t c = 100 c , t vj = 150 c , d= 0.1 35 non-repetitive peak forward current i f,max t c = 25 c , t p = 10s 264 a operating junction and storage temperature t vj , t stg -55...+175 c static characteristics (tested on wafer) value parameter symbol conditions min. typ. max. unit reverse current i r v r = 600v t vj = 25 c 1 100 a diode forward voltage v f i f = 8a t vj = 25 c 1.5 1.7 v dynamic characteristics, at t vj = 25 c, unless otherwise specified, tested at component value parameter symbol conditions min. typ. max. unit total capacitive charge q c t vj = 150 c 19 nc switching time 1) t c i f <=i f,max d i /d t = 200a/ s v r = 400v t vj = 150 c <10 ns v r = 1v 310 v r = 300v 50 total capacitance c f= 1mhz v r = 600v 50 pf 1) t c is the time constant for the capacitive di splacement current waveform (independent from t vj , i load and d i/ d t), different from t rr which is dependent on t vj , i load and d i/ d t. no reverse recovery time constant t rr due to absence of minority carrier injection
IDC08S60CE edited by infineon technologies, aim imm, edition 1.1, 27.01.2009 chip drawing a: anode pad a
IDC08S60CE edited by infineon technologies, aim imm, edition 1.1, 27.01.2009 description aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil-std 883 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hint s given herein, any typical values stated herein and/or any information regarding the application of the devic e, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without lim itation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may co ntain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered.
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